| Numera CAS: | - | EINECS Nu.: | - |
| igoa ole oloa: | Boron nitride pauta | Numera Fa'ata'ita'i: | NM-009 |
| Fa'aaliga: | pa'epa'e pa'epa'e | Igoa Fa'ailoga: | RWCHEM |
| Fa'atusa: | Pauta | Talosaga: | Alamanuia |
| itu: | 50-800nm | Mea: | Boron nitride pauta |
| Fa'aaogāga vaila'au: | Boron nitride pauta | mama: | 99.9% |
| Nofoaga na afua mai ai: | Shanghai, Saina (Mainland) | Ole lapopo'a ole fasimea (nm): | 50 |
| Vaega fa'apitoa o luga (m 2/g): | 43.6 | Ole tele (g/cm 3): | 0.11 |
| O oloa ua fa'avasegaina | Ole lapopo'a ole fasimea (nm) | Mama (%) | Laueleele fa'apitoa (m2/g) | Ole tele (g/cm3) | Polymorphs | Lanu |
| Nanoscale | 50 | >99.9 | 43.6 | 0.11 | O itu e ono | lanu pa'epa'e |
| Submicron | 600 | >99.9 | 9.23 | 9.16 | O itu e ono | lanu pa'epa'e |
Uiga autu
Ultrafine nano boron nitride, boron nitride paʻu e fesuiaʻi leisa ion beam, vailaʻau ausa deposition paʻu maualuga mama, laʻititi laʻititi laʻititi, vaega faʻapitoa i luga, maualuga gaioiga i luga, faʻatasi ai ma le fausaga tioata tutusa o le fausaga o le graphite layer, tatala, lubrication, faigofie absorption o susu (suia) e mafai ona foia le faʻafitauli o le susu o le susu, le lelei o le malamalama, ma isi;Fa'amamago lubricating gafatia o le mautu kemikolo sili ona lelei, maualalo fa'aluma fa'alautele fa'atasi, maualuga maualuga i lalo o le vevela vevela mea fa'alumaina;Mohs maaa 4, latalata i le maaa taimane, mautu vevela ma mea tau vailaʻau e sili atu nai lo isi mea.
Talosaga
1 transistor vevela fa'amaufa'ailoga pa'u pa'u ma palasitika resin fa'alava ma fa'apena i luga ole insulation o le vevela conductivity o polymer faaopoopo;
2 bits, mea olo, meafaigaluega tipi;
3 lubricants maualuga vevela, faʻamalolo faʻamalolo;
4 eletise maualuga eletise eletise ma le plasma arc o insulators, faʻapipiʻiina otometi le maualuga o le vevela faʻafefe, mea faʻapipiʻiina o le ogaumu, semiconductor malosi faʻafefiloi, le fausaga o mea faʻapipiʻi, mea faʻapipiʻi, e puipuia ai le neutron radiation o le radar transmission Pupuni ma afi roketi. , radar antenna medium composition, etc.
Shanghai Runwu Chemical Technology Co. Ltd o se oloa gaosi oloa gaosi oloa R & D, gaosiga, faʻatau, o se tasi o le mauaina.Matou te faʻalagolago i le malosi o suʻesuʻega ma tekinolosi matua, faʻavavevave le faʻaogaina o vailaʻau, faʻalagolago i le faasaienisi ma le atinaʻeina o tekonolosi, e tuʻuina atu i tagata faʻatau oloa tulaga maualuga o la matou sailiga faifaipea.
E masani lava ona matou feagai ma mea faʻale-aganuʻu, faʻapipiʻi uʻamea mamalu, mea faʻatau, eleele seasea.O nei mea e faʻaaogaina lautele i kemisi, vailaʻau, biology, puipuiga o le siosiomaga, malosi fou, ma isi.
Faatasi ai ma le tulaga muamua-vasega oloa tulaga lelei ma auaunaga faʻapitoa faʻapitoa, Ua matou manumalo i le viia o aganuʻu.I le taimi lava e tasi, i le atinaʻe, o loʻo tausisia e le matou kamupani le galulue faʻatasi ma kamupani faʻapitonuʻu ma fafo, faʻalapotopotoga suʻesuʻe faʻasaienisi, fesuiaiga o iunivesite, ina ia faʻaleleia atili le R & D ma le gaosiga gafatia, tuuto atu i le tuʻuina atu o tagata faʻatau oloa ma auaunaga sili atu.
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