I-SiC 40nm 99.9%

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I-SiC 40nm 99.9%

Imikhiqizo ihlukaniswa Imodeli Isilinganiso sikasayizi wezinhlayiyana (nm) Ubumsulwa (%) Indawo eqondile (m 2/ g) Ukuminyana ngobuningi (g/cm 3) Ama-Polymorphs Umbala
I-Nanoscale I-DK-SiC-001 40 > 99.9 39.8 0.11 Ikhibhu I-Celadon
I-Submicron I-DK-SiC-002 600 kuya ku-800 > 99.5 3.2 1.52 Ikhibhu Okumhlophe okungashoni

Izici eziyinhloko zei-nanometer silicon carbide, i-ultra-fine silicon carbide powder elungiselelwe ngenqubo ekhethekile enobumsulwa obuphakeme, uhla lokusabalalisa usayizi wezinhlayiyana ezincane, indawo ethile ephezulu;I-nano silicon carbide inezindawo zamakhemikhali ezizinzile, ukuguquguquka kokushisa okuphezulu (165W/MK), i-coefficient of thermal expansion encane, ukuqina okuphezulu, ukuqina kwe-Mohs kwe-9.5, ukuqina kwe-microhardness 2840 ~ 3320kg/mm2 Okokuqala kuzo zonke izinto ezigqoka izithasiselo, ukuqina kwayo phakathi i-corundum nedayimane, amandla emishini aphakeme kune-corundum;I-nano silicon carbide ine-conductivity enhle kakhulu yokushisa, noma i-semiconductor, ukushisa okuphezulu kwe-anti-oxidation;I-nano silicon carbide engagugi, ukumelana nokushisa okuphezulu, ukugqwala, i-asidi ne-alkali solvent, esetshenziswa kakhulu kumapende, penda ngaphakathi, yandisa ukumelana nokugqokwa.

Izicelo zeI-SiC 40nm 99.9% 
Izinto eziguquliwe zamandla enayiloni aphakeme: i-nano-SiC powder ezihlanganisweni ze-polymer inokuhambisana okuhle, ukuhlakazeka okuhle, kanye ne-substrate, amandla aqinile aguquliwe enayiloni anamandla kune-PA6 evamile akhuphuke ngo-150%, ukumelana nokugqoka kukhuphuke ngaphezu kwalokho. izikhathi ezintathu.Ikakhulukazi esetshenziselwa izimoto ezilandelwayo ze-armored izingxenye ze-polymer, izingxenye zokuqondisa, imishini yendwangu, imishini yezimayini, ama-linings, izingxenye zesitimela zingafinyelela ekushiseni okuphansi kwe-sintering;
Ukuguqulwa kwepulasitiki ekhethekile yobunjiniyela be-polyether ether ketone (PEEK) ukumelana nokugqoka: ukwelashwa kwe-nano silicon carbide ebusweni ngemuva kwenkampani, ukwengeza u-5% noma ngaphezulu, kungathuthukisa kakhulu futhi kuthuthukise ukumelana nokugqokwa kwe-PEEK futhi (ukuthuthukisa okwangempela kuka-30%). ;
I-3 nm silicon carbide ethayini lenjoloba: i-nano silicon carbide, engeza cishe u-2% ngaphansi kwesisekelo ayishintshi ukuguqulwa kwefomula yeglue yasekuqaleni, ngaphandle kokuyekethisa ukusebenza kwayo kwangempela nekhwalithi, ukumelana nokugqoka kunganyuswa ngo-20% -40%.Ngaphezu kwalokho, i-silicon carbide engu-40 nm esetshenziswa ku-roller yerabha, ukugqoka ifilimu ye-printer fuser, ukushisa, izinga lokushisa neminye imikhiqizo yerabha;
4 indawo yensimbi eyinhlanganisela ye-nano-SiC: izinhlayiya ezixubile zezinhlayiya ze-nanoscale, insimbi ye-nickel matrix, indawo yensimbi ukuze yakhe ukuminyana okuphezulu, ukubopha okuhle kakhulu kwe-electrodeposited composite coating, ingaphezulu lensimbi eliqinile kakhulu (ukuguga) kanye nokuzigcoba kwe-antifriction. izici zokushisa eziphezulu.Ukuqina kwe-Microhardness ye-coating eyinhlanganisela kuthuthukisa kakhulu ukumelana nokugqoka kukhuphuka izikhathi ezingu-2-3, impilo yesevisi ikhuphuke izikhathi ezingu-3-5, ukumboza kanye namandla okubopha i-substrate kukhuphuke ngo-40%, ikhono lokumboza, ukumboza okufanayo, okubushelelezi, okuningiliziwe;
Ezinye izinhlelo zokusebenza ezinhlanu: izitsha zobumba ezisebenza kahle kakhulu (njengama rocket nozzle, imboni yenuzi, njll.), izinto zokudonsa, amafutha angagqoki, amabhuleki asebenza kahle kakhulu, ukuqina okuphezulu kanye nempushana engagqoki, ukuqinisa inhlanganisela ye-ceramic kanye nokuqina, njll.;imboni ye-aerospace isakhiwo sokumboza, ukunamathela okusebenzayo, ukunamathela okuvikelayo, izinto ezimuncayo, izinto eziyimfihlo, njll.;izikhali zokuzivikela zamathangi nezimoto ezihlomile;amathuluzi okusika e-ceramic, amathuluzi okusika, amathuluzi okulinganisa, isikhunta;ingasetshenziselwa izinjongo ezikhethekile ze-ceramics yesakhiwo, i-ceramics esebenzayo, i-Engineering Ceramics;ukuthungela;izinto zokushisisa zikagesi zokusetshenziswa ezimbonini, ijeneretha ye-infrared kude.


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